Chip Sets New Speed Record
A research collaboration consisting of IHP-Innovations for High Performance Microelectronics and the Georgia Institute of Technology has demonstrated the world’s fastest silicon-based device to date. The investigators operated a silicon-germanium (SiGe) transistor at 798 gigahertz (GHz) fMAX, exceeding the previous speed record for silicon-germanium chips by about 200 GHz.
Although these operating speeds were achieved at extremely cold temperatures, the research suggests that record speeds at room temperature aren’t far off, says professor John Cressler, who led the research for Georgia Tech.
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